Abstract
Different levels of order of amorphous silicon (a-Si) samples have been measured by XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine structure) analysis. The EXAFS analysis has been carried out by using a first-shell fitting procedure while in the XANES part we have extracted the high-frequency residuals which change with the level of order. From this analysis a continuous increase of local ordering has been found as a function of the substrate deposition temperature of the a-Si films.
Original language | English |
---|---|
Number of pages | 2 |
Journal | Physica B: Condensed Matter |
Volume | 158 |
Issue number | 1 |
DOIs | |
Publication status | Published - 1989 |