X-ray Absorption Analysis of Structural Disorder in Amorphous Silicon

A. Di Cicco, A. Bianconi, C. Coluzza, P. Rudolf, P. Lagarde, A.M. Flank, A. Marcelli

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Abstract

Different levels of order of amorphous silicon (a-Si) samples have been measured by XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine structure) analysis. The EXAFS analysis has been carried out by using a first-shell fitting procedure while in the XANES part we have extracted the high-frequency residuals which change with the level of order. From this analysis a continuous increase of local ordering has been found as a function of the substrate deposition temperature of the a-Si films.
Original languageEnglish
Number of pages2
JournalPhysica B: Condensed Matter
Volume158
Issue number1
DOIs
Publication statusPublished - 1989

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