X-ray Absorption Analysis of Structural Disorder in Amorphous Silicon

A. Di Cicco; A. Bianconi; C. Coluzza; P. Rudolf; P. Lagarde; A.M. Flank; A. Marcelli

doi:10.1016/0921-4526(89)90401-8

X-ray Absorption Analysis of Structural Disorder in Amorphous Silicon

A. Di Cicco, A. Bianconi, C. Coluzza, P. Rudolf, P. Lagarde, A.M. Flank, A. Marcelli

Zernike Institute for Advanced Materials

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Abstract

Different levels of order of amorphous silicon (a-Si) samples have been measured by XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine structure) analysis. The EXAFS analysis has been carried out by using a first-shell fitting procedure while in the XANES part we have extracted the high-frequency residuals which change with the level of order. From this analysis a continuous increase of local ordering has been found as a function of the substrate deposition temperature of the a-Si films.

Original language	English
Number of pages	2
Journal	Physica B: Condensed Matter
Volume	158
Issue number	1
DOIs	https://doi.org/10.1016/0921-4526(89)90401-8
Publication status	Published - 1989

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Cite this

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title = "X-ray Absorption Analysis of Structural Disorder in Amorphous Silicon",

abstract = "Different levels of order of amorphous silicon (a-Si) samples have been measured by XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine structure) analysis. The EXAFS analysis has been carried out by using a first-shell fitting procedure while in the XANES part we have extracted the high-frequency residuals which change with the level of order. From this analysis a continuous increase of local ordering has been found as a function of the substrate deposition temperature of the a-Si films.",

author = "Cicco, {A. Di} and A. Bianconi and C. Coluzza and P. Rudolf and P. Lagarde and A.M. Flank and A. Marcelli",

note = "Relation: http://www.rug.nl/natuurkunde/ date_submitted:2006 Rights: University of Groningen. Materials Science Centre",

year = "1989",

doi = "10.1016/0921-4526(89)90401-8",

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journal = "Physica B: Condensed Matter",

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T1 - X-ray Absorption Analysis of Structural Disorder in Amorphous Silicon

AU - Cicco, A. Di

AU - Bianconi, A.

AU - Coluzza, C.

AU - Rudolf, P.

AU - Lagarde, P.

AU - Flank, A.M.

AU - Marcelli, A.

N1 - Relation: http://www.rug.nl/natuurkunde/ date_submitted:2006 Rights: University of Groningen. Materials Science Centre

PY - 1989

Y1 - 1989

N2 - Different levels of order of amorphous silicon (a-Si) samples have been measured by XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine structure) analysis. The EXAFS analysis has been carried out by using a first-shell fitting procedure while in the XANES part we have extracted the high-frequency residuals which change with the level of order. From this analysis a continuous increase of local ordering has been found as a function of the substrate deposition temperature of the a-Si films.

AB - Different levels of order of amorphous silicon (a-Si) samples have been measured by XANES (X-ray Absorption Near Edge Structure) and EXAFS (Extended X-ray Absorption Fine structure) analysis. The EXAFS analysis has been carried out by using a first-shell fitting procedure while in the XANES part we have extracted the high-frequency residuals which change with the level of order. From this analysis a continuous increase of local ordering has been found as a function of the substrate deposition temperature of the a-Si films.

U2 - 10.1016/0921-4526(89)90401-8

DO - 10.1016/0921-4526(89)90401-8

M3 - Article

VL - 158

JO - Physica B: Condensed Matter

JF - Physica B: Condensed Matter

SN - 0921-4526

IS - 1

ER -