XANES Study of Structural Disorder in Amorphous Silicon

A. Di Cicco, A. Bianconi, C. Coluzza, P. Rudolf, P. Lagarde, A.M. Flank, A. Marcelli

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An investigation of the structure of several amorphous silicon (a-Si) films is presented. Samples were prepared by using the ion beam sputtering technique at different substrate deposition temperatures. X-ray absorption spectroscopy and multiple scattering formalism have been used to detect structural variations of the a-Si films. The analysis of the XANES (X-ray absorption near-edge structure) spectra shows that increasing the substrate deposition temperature leads to a structural change toward a higher-level short-range order.
Original languageEnglish
Number of pages6
JournalJournal of Non-Crystalline Solids
Issue number1
Publication statusPublished - 1990

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