Synaptic Behavior in Ferroelectric Epitaxial Rhombohedral Hf0.5Zr0.5O2 Thin Films



In this work, the switching mechanism of the rhombohedral phase of HZO films is characterized by a two-stage process. In addition, the synaptic behaviour of this phase is presented, comparing it with previous reports on orthorhombic or non-epitaxial films. Unexpected similarities have been found between these structurally distinct systems.
Datum van beschikbaarheid14-okt.-2022

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