Ambipolar Tetraphenylpyrene (TPPy) Single-Crystal Field-Effect Transistor with Symmetric and Asymmetric Electrodes

S Z Bisri; T Takahashi; T Takenobu; M Yahiro; C Adachi; Y Iwasa

doi:10.1007/978-3-540-77968-1_8

Ambipolar Tetraphenylpyrene (TPPy) Single-Crystal Field-Effect Transistor with Symmetric and Asymmetric Electrodes

S Z Bisri, T Takahashi, T Takenobu, M Yahiro, C Adachi, Y Iwasa

Photophysics and OptoElectronics

Onderzoeksoutput › Academic

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An ambipolar field-effect transistor (FET) based on a 1,3,6, 8-tetraphenylpyrene (TPPy) single-crystal, a high photoluminescent material, has been successfully fabricated using symmetric and asymmetric electrodes. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics in the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10−2cm2 V−1 s−1 were achieved by using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.

Originele taal-2	English
Titel	Frontiers in Materials Research
Redacteuren	Y Fujikawa, K Nakajima, T Sakurai
Plaats van productie	Berlin
Uitgeverij	Springer
Pagina's	103-110
Aantal pagina's	7
ISBN van geprinte versie	978-3-540-77967-4
DOI's	https://doi.org/10.1007/978-3-540-77968-1_8
Status	Published - 2008

Publicatie series

Naam	Advances in Materials Research
Uitgeverij	Springer
Volume	10
ISSN van geprinte versie	1435-1889

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10.1007/978-3-540-77968-1_8

http://dx.doi.org/10.1007/978-3-540-77968-1_8

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Bisri, S. Z., Takahashi, T., Takenobu, T., Yahiro, M., Adachi, C., & Iwasa, Y. (2008). Ambipolar Tetraphenylpyrene (TPPy) Single-Crystal Field-Effect Transistor with Symmetric and Asymmetric Electrodes. In Y. Fujikawa, K. Nakajima, & T. Sakurai (editors), Frontiers in Materials Research (blz. 103-110 ). (Advances in Materials Research; Vol. 10). Springer. https://doi.org/10.1007/978-3-540-77968-1_8

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title = "Ambipolar Tetraphenylpyrene (TPPy) Single-Crystal Field-Effect Transistor with Symmetric and Asymmetric Electrodes",

abstract = "An ambipolar field-effect transistor (FET) based on a 1,3,6, 8-tetraphenylpyrene (TPPy) single-crystal, a high photoluminescent material, has been successfully fabricated using symmetric and asymmetric electrodes. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics in the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10−2cm2 V−1 s−1 were achieved by using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.",

author = "Bisri, {S Z} and T Takahashi and T Takenobu and M Yahiro and C Adachi and Y Iwasa",

year = "2008",

doi = "10.1007/978-3-540-77968-1_8",

language = "English",

isbn = "978-3-540-77967-4",

series = "Advances in Materials Research",

publisher = "Springer",

pages = "103--110 ",

editor = "Y Fujikawa and Nakajima, { K} and Sakurai, { T}",

booktitle = "Frontiers in Materials Research",

}

Bisri, SZ, Takahashi, T, Takenobu, T, Yahiro, M, Adachi, C & Iwasa, Y 2008, Ambipolar Tetraphenylpyrene (TPPy) Single-Crystal Field-Effect Transistor with Symmetric and Asymmetric Electrodes. in Y Fujikawa, K Nakajima & T Sakurai (uitgave), Frontiers in Materials Research. Advances in Materials Research, vol. 10, Springer, Berlin, blz. 103-110 . https://doi.org/10.1007/978-3-540-77968-1_8

TY - CHAP

T1 - Ambipolar Tetraphenylpyrene (TPPy) Single-Crystal Field-Effect Transistor with Symmetric and Asymmetric Electrodes

AU - Bisri, S Z

AU - Takahashi, T

AU - Takenobu, T

AU - Yahiro, M

AU - Adachi, C

AU - Iwasa, Y

PY - 2008

Y1 - 2008

N2 - An ambipolar field-effect transistor (FET) based on a 1,3,6, 8-tetraphenylpyrene (TPPy) single-crystal, a high photoluminescent material, has been successfully fabricated using symmetric and asymmetric electrodes. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics in the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10−2cm2 V−1 s−1 were achieved by using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.

AB - An ambipolar field-effect transistor (FET) based on a 1,3,6, 8-tetraphenylpyrene (TPPy) single-crystal, a high photoluminescent material, has been successfully fabricated using symmetric and asymmetric electrodes. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics in the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10−2cm2 V−1 s−1 were achieved by using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.

U2 - 10.1007/978-3-540-77968-1_8

DO - 10.1007/978-3-540-77968-1_8

M3 - Chapter

SN - 978-3-540-77967-4

T3 - Advances in Materials Research

SP - 103

EP - 110

BT - Frontiers in Materials Research

A2 - Fujikawa, Y

A2 - Nakajima, K

A2 - Sakurai, T

PB - Springer

CY - Berlin

ER -

Ambipolar Tetraphenylpyrene (TPPy) Single-Crystal Field-Effect Transistor with Symmetric and Asymmetric Electrodes

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