An ambipolar field-effect transistor (FET) based on a 1,3,6, 8-tetraphenylpyrene (TPPy) single-crystal, a high photoluminescent material, has been successfully fabricated using symmetric and asymmetric electrodes. Several kinds of metal electrodes have been employed to investigate the charge injection characteristics in the single-crystal FET. Hole and electron mobilities of 0.34 and 7.7 × 10−2cm2 V−1 s−1 were achieved by using Au and Ca electrodes, respectively. The ambipolar characteristic of this device gives a prospect for further development in light-emitting FET operation.
|Naam||Advances in Materials Research|
|ISSN van geprinte versie||1435-1889|