Keyphrases
Field-effect Transistors
100%
Tunneling Contact
100%
Hexagonal Boron Nitride (h-BN)
100%
Monolayer MoSe2
100%
MoSe2
62%
Charge Transport
25%
Transistor
25%
Electronic Devices
12%
Low Energy
12%
Room Temperature
12%
Electrical Properties
12%
Energy Charge
12%
Fermi Energy
12%
Device-independent
12%
Intrinsic Properties
12%
Dielectric
12%
Heterostructure
12%
Chemical Interaction
12%
I-V Characteristics
12%
Contact Resistance
12%
Electrical Transport
12%
Schottky Barrier
12%
Electron Mobility
12%
Fermi Level pinning
12%
Electrical Contact
12%
Spin Transport
12%
Spintronic Devices
12%
Effcient
12%
Contact Region
12%
Electrical Behavior
12%
Material Science
Field Effect Transistor
100%
Monolayers
100%
Boron Nitride
100%
Transistor
25%
Dielectric Material
12%
Schottky Barrier
12%
Heterojunction
12%
Current-Voltage Characteristic
12%
Contact Resistance
12%
Electron Mobility
12%
Physics
Field Effect Transistor
100%
Hexagonal Boron Nitride
100%
Room Temperature
12%
Theoretical Model
12%
Dielectrics
12%
Spintronics
12%
Heterojunctions
12%
Electrical Properties
12%
Electron Mobility
12%
Pinning
12%