Breakdown of anomalous channeling with ion energy for accurate strain determination in GaN-based heterostructures

A. Redondo-Cubero*, K. Lorenz, R. Gago, N. Franco, S. Fernandez-Garrido, P. J. M. Smulders, E. Munoz, E. Calleja, I. M. Watson, E. Alves

*Bijbehorende auteur voor dit werk

    OnderzoeksoutputAcademicpeer review

    8 Citaten (Scopus)
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    The influence of the beam energy on the determination of strain state with ion channeling in GaN-based heterostructures (HSs) is addressed. Experimental results show that anomalous channeling may hinder an accurate analysis due to the steering effects at the HS interface, which are more intense at lower ion energies. The experimental angular scans have been well reproduced by Monte Carlo simulations, correlating the steering effects with the close encounter probability at the interface. Consequently, limitations in the determination of the strain state by ion channeling can be overcome by selecting the adequate beam energy.
    Originele taal-2English
    Artikelnummer051921
    Aantal pagina's3
    TijdschriftApplied Physics Letters
    Volume95
    Nummer van het tijdschrift5
    DOI's
    StatusPublished - 3-aug-2009

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