Characterization of ultrasharp field emitters by projection microscopy

M. Fransen; EPN Damen; C Schiller; TL vanRooy; HB Groen; P Kruit

doi:10.1016/0169-4332(95)00358-4

Characterization of ultrasharp field emitters by projection microscopy

M. Fransen, EPN Damen, C Schiller, TL vanRooy, HB Groen, P Kruit

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The electron optical brightness and the virtual source size of an ultrasharp field electron emitter were determined by an analysis of Fresnel fringes occurring in point projection microscopy images. Simulating the Fresnel diffraction pattern by taking into account the influence of the source size, the source diameter was determined as 5.2 +/- 1 nm. From additional current density measurements, using the same model, the reduced brightness was calculated. The brightness values obtained ranged from 1 x 10(7) to 3 x 10(9) A/m(2) . sr . V for currents between I pA and 5 nA,. A comparison of our results with the work of other authors is given.

Originele taal-2	English
Pagina's (van-tot)	107-112
Aantal pagina's	6
Tijdschrift	Applied Surface Science
Volume	94-5
DOI's	https://doi.org/10.1016/0169-4332(95)00358-4
Status	Published - mrt.-1996
Evenement	42nd International Field Emission Symposium - Duur: 7-aug.-1995 → 11-aug.-1995

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Characterization of ultrasharp field emitters by projection microscopy
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@article{9295d76ade8743eeb2780cd534f4c475,

title = "Characterization of ultrasharp field emitters by projection microscopy",

abstract = "The electron optical brightness and the virtual source size of an ultrasharp field electron emitter were determined by an analysis of Fresnel fringes occurring in point projection microscopy images. Simulating the Fresnel diffraction pattern by taking into account the influence of the source size, the source diameter was determined as 5.2 +/- 1 nm. From additional current density measurements, using the same model, the reduced brightness was calculated. The brightness values obtained ranged from 1 x 10(7) to 3 x 10(9) A/m(2) . sr . V for currents between I pA and 5 nA,. A comparison of our results with the work of other authors is given.",

author = "M. Fransen and EPN Damen and C Schiller and TL vanRooy and HB Groen and P Kruit",

year = "1996",

month = mar,

doi = "10.1016/0169-4332(95)00358-4",

language = "English",

volume = "94-5",

pages = "107--112",

journal = "Applied Surface Science",

issn = "0169-4332",

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note = "42nd International Field Emission Symposium ; Conference date: 07-08-1995 Through 11-08-1995",

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TY - JOUR

T1 - Characterization of ultrasharp field emitters by projection microscopy

AU - Fransen, M.

AU - Damen, EPN

AU - Schiller, C

AU - vanRooy, TL

AU - Groen, HB

AU - Kruit, P

PY - 1996/3

Y1 - 1996/3

N2 - The electron optical brightness and the virtual source size of an ultrasharp field electron emitter were determined by an analysis of Fresnel fringes occurring in point projection microscopy images. Simulating the Fresnel diffraction pattern by taking into account the influence of the source size, the source diameter was determined as 5.2 +/- 1 nm. From additional current density measurements, using the same model, the reduced brightness was calculated. The brightness values obtained ranged from 1 x 10(7) to 3 x 10(9) A/m(2) . sr . V for currents between I pA and 5 nA,. A comparison of our results with the work of other authors is given.

AB - The electron optical brightness and the virtual source size of an ultrasharp field electron emitter were determined by an analysis of Fresnel fringes occurring in point projection microscopy images. Simulating the Fresnel diffraction pattern by taking into account the influence of the source size, the source diameter was determined as 5.2 +/- 1 nm. From additional current density measurements, using the same model, the reduced brightness was calculated. The brightness values obtained ranged from 1 x 10(7) to 3 x 10(9) A/m(2) . sr . V for currents between I pA and 5 nA,. A comparison of our results with the work of other authors is given.

U2 - 10.1016/0169-4332(95)00358-4

DO - 10.1016/0169-4332(95)00358-4

M3 - Article

SN - 0169-4332

VL - 94-5

SP - 107

EP - 112

JO - Applied Surface Science

JF - Applied Surface Science

T2 - 42nd International Field Emission Symposium

Y2 - 7 August 1995 through 11 August 1995

ER -

Characterization of ultrasharp field emitters by projection microscopy

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