Charge transport and trap states in lead sulfide quantum dot field-effect transistors

Mohamad Insan Nugraha

Charge transport and trap states in lead sulfide quantum dot field-effect transistors

Vertaalde titel van de bijdrage: Ladingstransport en ladingsvallen in lead sulfide quantum dot veld-effect transistors

Mohamad Insan Nugraha

Photophysics and OptoElectronics

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Lood sulfide Quantum Dots (PbS QDs) hebben grote potentie voor een breed scala aan elektronische apparaten; denk aan zonnecellen, sensors en LEDs. De kwantumopsluiting in deze materialen leidt tot discretie van energieniveaus en afstembaarheid van de bandkloof. Deze materialen zijn ook compatibel met vanuit oplossing verwerkbaar vloeibare depositiemethodes wat weer zorgt voor lage fabricagekosten en energiezuinige consumentenelektronica. PbS QDs zijn ook intensief onderzocht in veldeffect transistoren (FETs), een van de hoofdcomponenten van logica. FETs gebaseerd op deze materialen ondervinden echter nog steeds een lage mobiliteit (~10-2 cm2V-1s-1), voornamelijk door het hoge aantal ladingsvallen. Hoofdoorzaak van stagnerende verbetering in mobiliteit is het gebrek aan kennis over ladingstransport en ladingsvallen in deze toepassingen. Dit proefschrift heeft als focus het onderzoeken van ladingstransport en de rol van ladingsvallen in FETs gebaseerd op PbS QDs.
Er is gebruik gemaakt van verschillende methodes, waaronder de introductie van moleculaire dipolen op het diëlektrica oppervlak, het gebruik van diëlektrica met betere oppervlak eigenschappen en het gebruik van hoge-k diëlektrica. Deze methodes hebben invloed op de elektronische karakteristiek en elektronische structuren van ladingsvallen in de apparaten blijkens dit onderzoek.
Chemische doping door middel van organische moleculen is ook onderzocht, wat de afstembaarheid van apparaat-polariteit en een mobiliteit tot 0.64 cm2V-1s-1 mogelijk maakt. De fabricage van FETs op plastic substraten maakt het mogelijk om mechanische spanning te introduceren waarmee we de inter-QD afstand moduleren en verder de ladingsdragermobiliteit verbeteren tot 3.0 cm2V-1s-1, de hoogste mobiliteit gerapporteerd in flexibele FETs gebaseerd op PbS QDs.

Vertaalde titel van de bijdrage	Ladingstransport en ladingsvallen in lead sulfide quantum dot veld-effect transistors
Originele taal-2	English
Kwalificatie	Doctor of Philosophy
Toekennende instantie	Rijksuniversiteit Groningen
Begeleider(s)/adviseur	Loi, Maria, Supervisor Takeya, Jun, Supervisor, Externe Persoon
Datum van toekenning	16-jun.-2017
Plaats van publicatie	[Groningen]
Uitgever	University of Groningen
Gedrukte ISBN's	978-90-367-9746-7
Elektronische ISBN's	978-90-367-9745-0
Status	Published - 2017

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Title and contentsFinal publisher's version, 333 KB
Chapter 1Final publisher's version, 2,05 MB
Chapter 2Final publisher's version, 979 KB
Chapter 3Final publisher's version, 842 KB
Chapter 4Final publisher's version, 479 KB
Chapter 5Final publisher's version, 428 KB
Chapter 6Final publisher's version, 2,02 MB
SummaryFinal publisher's version, 120 KB
SamenvattingFinal publisher's version, 121 KB
AcknowledgementFinal publisher's version, 108 KB
List of PublicationsFinal publisher's version, 146 KB
Complete thesisFinal publisher's version, 6 MB
PropositionsFinal publisher's version, 55,8 KB

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title = "Charge transport and trap states in lead sulfide quantum dot field-effect transistors",

abstract = "Lead sulfide quantum dots (PbS QDs) have shown great potentials for a wide range of electronic devices such as solar cells, sensors, and light-emitting devices. The quantum confinement in these materials leads to the quantization of energy and the size-tunability of their band-gap. These materials are also compatible with solution-processed deposition methods, which allows the fabrication of low cost and low energy consuming electronic devices. PbS QDs have been also intensively investigated in field-effect transistors (FETs), one of main components of logic circuits. However, FETs based on these materials still suffer from low carrier mobility (~10-2 cm2V-1s-1) due especially to the high number of carrier traps. Main obstacle for further mobility improvement is the lack of understanding charge transport and carrier traps in the devices. This thesis aims to investigate charge transport and the role of carrier traps in FETs based on PbS QDs.Several methods were used including the introduction of molecular dipoles on the dielectric surface, the use of dielectric with better surface properties, and the utilization of high-k dielectrics. These methods were found to influence the electrical characteristics and the electronic structures of carrier traps in the devices. Chemical doping using organic molecules was also performed which allows tuning the device polarity and obtaining mobility as high as 0.64 cm2V-1s-1. The fabrication of FETs on plastic substrates allowed introducing mechanical strain, with which we modulated the inter-QD distance and further improved carrier mobility to 3.0 cm2V-1s-1, the highest mobility reported in flexible FETs based on PbS QDs.",

author = "Nugraha, {Mohamad Insan}",

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T1 - Charge transport and trap states in lead sulfide quantum dot field-effect transistors

AU - Nugraha, Mohamad Insan

PY - 2017

Y1 - 2017

N2 - Lead sulfide quantum dots (PbS QDs) have shown great potentials for a wide range of electronic devices such as solar cells, sensors, and light-emitting devices. The quantum confinement in these materials leads to the quantization of energy and the size-tunability of their band-gap. These materials are also compatible with solution-processed deposition methods, which allows the fabrication of low cost and low energy consuming electronic devices. PbS QDs have been also intensively investigated in field-effect transistors (FETs), one of main components of logic circuits. However, FETs based on these materials still suffer from low carrier mobility (~10-2 cm2V-1s-1) due especially to the high number of carrier traps. Main obstacle for further mobility improvement is the lack of understanding charge transport and carrier traps in the devices. This thesis aims to investigate charge transport and the role of carrier traps in FETs based on PbS QDs.Several methods were used including the introduction of molecular dipoles on the dielectric surface, the use of dielectric with better surface properties, and the utilization of high-k dielectrics. These methods were found to influence the electrical characteristics and the electronic structures of carrier traps in the devices. Chemical doping using organic molecules was also performed which allows tuning the device polarity and obtaining mobility as high as 0.64 cm2V-1s-1. The fabrication of FETs on plastic substrates allowed introducing mechanical strain, with which we modulated the inter-QD distance and further improved carrier mobility to 3.0 cm2V-1s-1, the highest mobility reported in flexible FETs based on PbS QDs.

AB - Lead sulfide quantum dots (PbS QDs) have shown great potentials for a wide range of electronic devices such as solar cells, sensors, and light-emitting devices. The quantum confinement in these materials leads to the quantization of energy and the size-tunability of their band-gap. These materials are also compatible with solution-processed deposition methods, which allows the fabrication of low cost and low energy consuming electronic devices. PbS QDs have been also intensively investigated in field-effect transistors (FETs), one of main components of logic circuits. However, FETs based on these materials still suffer from low carrier mobility (~10-2 cm2V-1s-1) due especially to the high number of carrier traps. Main obstacle for further mobility improvement is the lack of understanding charge transport and carrier traps in the devices. This thesis aims to investigate charge transport and the role of carrier traps in FETs based on PbS QDs.Several methods were used including the introduction of molecular dipoles on the dielectric surface, the use of dielectric with better surface properties, and the utilization of high-k dielectrics. These methods were found to influence the electrical characteristics and the electronic structures of carrier traps in the devices. Chemical doping using organic molecules was also performed which allows tuning the device polarity and obtaining mobility as high as 0.64 cm2V-1s-1. The fabrication of FETs on plastic substrates allowed introducing mechanical strain, with which we modulated the inter-QD distance and further improved carrier mobility to 3.0 cm2V-1s-1, the highest mobility reported in flexible FETs based on PbS QDs.

M3 - Thesis fully internal (DIV)

SN - 978-90-367-9746-7

PB - University of Groningen

CY - [Groningen]

ER -

Charge transport and trap states in lead sulfide quantum dot field-effect transistors

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