Correction: Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics (vol 2, art 1500467, 2016)

Artem G. Shulga; Laura Piveteau; Satria Z. Bisri; Maksym V. Kovalenko; Maria A. Loi

doi:10.1002/aelm.201600095

Correction: Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics (vol 2, art 1500467, 2016)

Artem G. Shulga, Laura Piveteau, Satria Z. Bisri, Maksym V. Kovalenko, Maria A. Loi

Photophysics and OptoElectronics

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Originele taal-2	English
Aantal pagina's	1
Tijdschrift	Advanced electronic materials
Volume	2
Nummer van het tijdschrift	4
DOI's	https://doi.org/10.1002/aelm.201600095
Status	Published - apr.-2016

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Correction Double Gate PbS Quantum Dot Field-Effect TransistorFinal publisher's version, 857 KBLicentie: Taverne

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Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics
Shulga, A. G., Piveteau, L., Bisri, S. Z., Kovalenko, M. V. & Loi, M. A., apr.-2016, In: Advanced electronic materials. 2, 4, 8 blz., 1500467.
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title = "Correction: Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics (vol 2, art 1500467, 2016)",

author = "Shulga, {Artem G.} and Laura Piveteau and Bisri, {Satria Z.} and Kovalenko, {Maksym V.} and Loi, {Maria A.}",

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AU - Shulga, Artem G.

AU - Piveteau, Laura

AU - Bisri, Satria Z.

AU - Kovalenko, Maksym V.

AU - Loi, Maria A.

PY - 2016/4

Y1 - 2016/4

U2 - 10.1002/aelm.201600095

DO - 10.1002/aelm.201600095

M3 - Erratum

SN - 2199-160X

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JO - Advanced electronic materials

JF - Advanced electronic materials

IS - 4

ER -

Correction: Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics (vol 2, art 1500467, 2016)

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Double Gate PbS Quantum Dot Field-Effect Transistors for Tuneable Electrical Characteristics

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