Customizing the Polarity of Single-Walled Carbon-Nanotube Field-Effect Transistors Using Solution-Based Additives

Jorge Mario Salazar-Rios, Aprizal Akbar Sengrian, Wytse Talsma, Herman Duim, Mustapha Abdu-Aguye, Stefan Jung, Nils Froehlich, Sybille Allard, Ullrich Scherf, Maria Antonietta Loi*

*Bijbehorende auteur voor dit werk

OnderzoeksoutputAcademicpeer review

4 Citaten (Scopus)
38 Downloads (Pure)


Polarity control in semiconducting single-walled carbon-nanotube field-effect transistors (s-SWNT FETs) is important to promote their application in logic devices. The methods to turn the intrinsically ambipolar s-SWNT FETs into unipolar devices that have been proposed until now require extra fabrication steps that make preparation longer and more complex. It is demonstrated that by starting from a highly purified ink of semiconducting single-walled carbon nanotubes sorted by a conjugated polymer, and mixing them with additives, it is possible to achieve unipolar charge transport. The three additives used are benzyl viologen (BV), 4-(2,3-dihydro-1,3-dimethyl-1H-benzimidazol-2-yl)-N,N-dimethylbenzenamine (N-DMBI), which give rise to n-type field-effect transistors, and 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F-4-TCNQ) which gives rise to p-type transistors. BV and N-DMBI transform the s-SWNTs transistors from ambipolar with mobility of the order of 0.7 cm(2) V-1 s(-1) to n-type with mobility up to 5 cm(2) V-1 s(-1). F-4-TCNQ transform the ambipolar transistors in p-type with mobility up to 16 cm(2) V-1 s(-1).

Originele taal-2English
Aantal pagina's9
TijdschriftAdvanced electronic materials
Nummer van het tijdschrift3
Vroegere onlinedatum29-nov-2019
StatusPublished - 2020

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