Disorder is not always bad for charge-to-spin conversion in WTe2

Marcos H. D. Guimaraes*, Saroj P. Dash

*Bijbehorende auteur voor dit werk

OnderzoeksoutputAcademicpeer review

1 Citaat (Scopus)
68 Downloads (Pure)


The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.

Originele taal-2English
Pagina's (van-tot)1440-1441
Aantal pagina's2
Nummer van het tijdschrift5
StatusPublished - 5-mei-2021

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