Disorder is not always bad for charge-to-spin conversion in WTe2

Marcos H. D. Guimaraes; Saroj P. Dash

doi:10.1016/j.matt.2021.04.009

Disorder is not always bad for charge-to-spin conversion in WTe2

Marcos H. D. Guimaraes^*, Saroj P. Dash

^*Corresponding author voor dit werk

Fysica van Nano Devices

Onderzoeksoutput › Academic › peer review

1 Citaat (Scopus)

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The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.

Originele taal-2	English
Pagina's (van-tot)	1440-1441
Aantal pagina's	2
Tijdschrift	Matter
Volume	4
Nummer van het tijdschrift	5
DOI's	https://doi.org/10.1016/j.matt.2021.04.009
Status	Published - 5-mei-2021

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10.1016/j.matt.2021.04.009

Disorder is not always bad for charge-to-spin conversion in WTe2Final publisher's version, 421 KBLicentie: Taverne

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title = "Disorder is not always bad for charge-to-spin conversion in WTe2",

abstract = "The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.",

author = "Guimaraes, {Marcos H. D.} and Dash, {Saroj P.}",

year = "2021",

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T1 - Disorder is not always bad for charge-to-spin conversion in WTe2

AU - Guimaraes, Marcos H. D.

AU - Dash, Saroj P.

PY - 2021/5/5

Y1 - 2021/5/5

N2 - The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.

AB - The Wang group at Stanford University demonstrates disordered WTex films for efficient charge-to-spin conversion phenomena. The deposition of these films by sputtering and the charge-to-spin conversion resilience against disorder make them attractive for applications in new magnetic memory devices.

U2 - 10.1016/j.matt.2021.04.009

DO - 10.1016/j.matt.2021.04.009

M3 - Editorial

SN - 2590-2393

VL - 4

SP - 1440

EP - 1441

JO - Matter

JF - Matter

IS - 5

ER -

Disorder is not always bad for charge-to-spin conversion in WTe2

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