@inproceedings{b3b7cdba43464f4da132438643165006,
title = "Electric field modulation of tunneling anisotropic magnetoresistance across the Schottky interface of Ni/Nb-doped SrTiO3at room temperature: Proceedings Volume 10732, Spintronics XI; 107323B (2018)",
abstract = "An electric field modulation of tunneling anisotropic magnetoresistance (TAMR) is reported at the Schottky interface of Ni and Nb-doped SrTiO3 at room temperature. TAMR response as high as 0.11% is observed in the bias dependence. A bias is applied across the Schottky junction whose variation also modulates the built-in electric field across the interface. This is simulated from the electrostatic modelling across the Schottky interface. Strength of the TAMR response and its modulation with electric field is strongly dependent on the large dielectric permittivity of SrTiO3at room temperature and on the modulation of the Rashba spin-orbit field across the Schottky interface respectively. This experiment, shows an unique method to store and manipulate spin states by an electric field across the Schottky interface.",
keywords = "electric field, Rashba spin-orbit coupling, Schottky junction, tunneling anisotropic magnetoresistance",
author = "A. Das and Goossens, {Vincent M.} and Goossens, {A. S.} and T. Banerjee",
note = "Funding Information: The authors acknowledge the technical support from Johan Holstein, Martijn de Roosz, Tom Schouten and Herman Adema. This work is supported by the Dieptestrategie grant 2014 from Zernike Institute for Advanced Materials, and Top Master programme in Nanoscience, University of Groningen. Publisher Copyright: {\textcopyright} 2018 SPIE.; Spintronics XI ; Conference date: 19-08-2018 Through 23-08-2018",
year = "2018",
doi = "10.1117/12.2320926",
language = "English",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
editor = "Jean-Eric Wegrowe and Henri-Jean Drouhin and Manijeh Razeghi and Henri Jaffres",
booktitle = "Spintronics XI",
}