Electroluminescence Generation in PbS Quantum Dot Light-Emitting Field-Effect Transistors with Solid-State Gating

Artem G. Shulga, Simon Kahmann, Dmitry N. Dirin, Arko Graf, Jana Zaumseil, Maksym V. Kovalenko, Maria A. Loi*

*Corresponding author voor dit werk

OnderzoeksoutputAcademicpeer review

48 Citaten (Scopus)
350 Downloads (Pure)

Samenvatting

The application of light-emitting field-effect transistors (LEFET) is an elegant way of combining electrical switching and light emission in a single device architecture instead of two. This allows for a higher degree of miniaturization and integration in future optoelectronic applications. Here, we report on a LEFET based on lead sulfide quantum dots processed from solution. Our device shows state-of-the-art electronic behavior and emits near infrared photons with a quantum yield exceeding 1% when cooled. We furthermore show how LEFETs can be used to simultaneously characterize the optical and electrical material properties on the same device and use this benefit dot film. to investigate the charge transport through the quantum dot film.

Originele taal-2English
Pagina's (van-tot)12805-12813
Aantal pagina's9
TijdschriftAcs Nano
Volume12
Nummer van het tijdschrift12
DOI's
StatusPublished - dec.-2018

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