@inproceedings{6ae7078c81f64745a2defc6c27ce4e6d,
title = "Electromagnetically induced transparency in low-doped n-GaAs",
abstract = "We report the observation of electromagnetically induced transparency (EIT) with an ensemble of donor-bound electrons in low-doped n-GaAs. We used pure GaAs layers with Si doping at very low concentration in a strong magnetic field. EIT was implemented with the two optical transitions that exist for the three-level system that is formed by the two electron spin states and a donor-bound trion state. Our results show that EIT with n-GaAs can serve as a platform for studies of nonlocal quantum entanglement with spins in semiconductors, as well as for controlling and probing dynamical nuclear polarization with coherent electron spins.",
keywords = "Electromagnetically induced transparency, donor-bound electrons, donor-bound excitons, GaAs, ATOMIC ENSEMBLES, OPTICS, LIGHT, ENTANGLEMENT, EXCITATION",
author = "{van der Wal}, {C. H.} and M. Sladkov and Chaubal, {A. U.} and Bakker, {M. P.} and Onur, {A. R.} and D. Reuter and Wieck, {A. D.}",
year = "2011",
doi = "10.1063/1.3666734",
language = "English",
isbn = "978-0-7354-1002-2",
series = "AIP Conference Proceedings",
publisher = "AMER INST PHYSICS",
pages = "1039--1040",
editor = "J Ihm and H Cheong",
booktitle = "PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS",
note = "30th International Conference on the Physics of Semiconductors (ICPS-30) ; Conference date: 25-07-2010 Through 30-07-2010",
}