Electromagnetically induced transparency with an ensemble of donor-bound electron spins in a semiconductor

We present measurements of electromagnetically induced transparency with an ensemble of donor-bound electrons in low-doped n-GaAs. We used optical transitions from the Zeeman-split electron-spin states to a bound trion state in samples with optical densities of 0.3 and 1.0. The electron-spin dephasing time T*(2) approximate to 2 ns was limited by hyperfine coupling to fluctuating nuclear spins. We also observe signatures of dynamical nuclear polarization but find these effects to be much weaker than in experiments that use electron-spin resonance and related experiments with quantum dots.