Electronic properties of germanane field-effect transistors

B.N. Madhushankar, A. Kaverzin, T. Giousis, G. Potsi, D. Gournis, P. Rudolf, G.R. Blake, C.H. van der Wal, B.J. van Wees

OnderzoeksoutputAcademicpeer review

54 Citaten (Scopus)
309 Downloads (Pure)

Samenvatting

A new two dimensional (2D) material—germanane—has been synthesised recently with promising electrical and optical properties. In this paper we report the first realisation of germanane field-effect transistors fabricated from multilayer single crystal flakes. Our germanane devices show transport in both electron and hole doped regimes with on/off current ratio of up to 10e5(10e4) and carrier mobilities of 150  cm2 (Vs)−1(70 cm2 (Vs)−1) at 77 K (room temperature). A significant enhancement of the device conductivity under illumination with 650 nm red laser is observed. Our results reveal ambipolar transport properties of germanane with great potential for (opto)electronics applications.
Originele taal-2English
Artikelnummer2
Pagina's (van-tot)021009
Aantal pagina's6
Tijdschrift2D Materials
Volume4
Nummer van het tijdschrift2
DOI's
StatusPublished - 3-mrt-2017

Citeer dit