Experimental determination of the quasiparticle decay length ξqp in a diffusive superconducting quantum well

P.H.C. Magnée; S.G. den Hartog; B.J.  van Wees; T.M. Klapwijk

doi:10.1103/PhysRevB.52.R11630

Experimental determination of the quasiparticle decay length ξqp in a diffusive superconducting quantum well

P.H.C. Magnée, S.G. den Hartog, B.J. van Wees, T.M. Klapwijk

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We have experimentally investigated the electronic transport properties of an AlSb/InAs/AlSb quantum well, where part of the AlSb top layer has been replaced with a superconducting Nb strip. By doing a transmission experiment underneath the Nb strip and comparing the results with a model based on diffusive transport, with some of the injected electrons being Andreev reflected into holes, we can estimate the quasiparticle decay length, xi(qp) similar to 50 nm, in the Nb-InAs superconducting quantum well. This decay length corresponds to an interface transparency of T-SIN = 0.5 between the Nb and InAs. The observed voltage dependence cannot entirely be understood within the presented model.

Originele taal-2	English
Pagina's (van-tot)	11630-11633
Aantal pagina's	4
Tijdschrift	Physical Review B
Volume	52
Nummer van het tijdschrift	16
DOI's	https://doi.org/10.1103/PhysRevB.52.R11630
Status	Published - 15-okt.-1995

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Experimental determination of the quasiparticle decay length ξqp in a diffusive superconducting quantum well
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title = "Experimental determination of the quasiparticle decay length ξqp in a diffusive superconducting quantum well",

abstract = "We have experimentally investigated the electronic transport properties of an AlSb/InAs/AlSb quantum well, where part of the AlSb top layer has been replaced with a superconducting Nb strip. By doing a transmission experiment underneath the Nb strip and comparing the results with a model based on diffusive transport, with some of the injected electrons being Andreev reflected into holes, we can estimate the quasiparticle decay length, xi(qp) similar to 50 nm, in the Nb-InAs superconducting quantum well. This decay length corresponds to an interface transparency of T-SIN = 0.5 between the Nb and InAs. The observed voltage dependence cannot entirely be understood within the presented model.",

author = "P.H.C. Magn{\'e}e and Hartog, {S.G. den} and {van Wees}, B.J. and T.M. Klapwijk",

note = "Relation: http://www.rug.nl/natuurkunde/ date_submitted:2006 Rights: University of Groningen. Materials Science Centre",

year = "1995",

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T1 - Experimental determination of the quasiparticle decay length ξqp in a diffusive superconducting quantum well

AU - Magnée, P.H.C.

AU - Hartog, S.G. den

AU - van Wees, B.J.

AU - Klapwijk, T.M.

N1 - Relation: http://www.rug.nl/natuurkunde/ date_submitted:2006 Rights: University of Groningen. Materials Science Centre

PY - 1995/10/15

Y1 - 1995/10/15

N2 - We have experimentally investigated the electronic transport properties of an AlSb/InAs/AlSb quantum well, where part of the AlSb top layer has been replaced with a superconducting Nb strip. By doing a transmission experiment underneath the Nb strip and comparing the results with a model based on diffusive transport, with some of the injected electrons being Andreev reflected into holes, we can estimate the quasiparticle decay length, xi(qp) similar to 50 nm, in the Nb-InAs superconducting quantum well. This decay length corresponds to an interface transparency of T-SIN = 0.5 between the Nb and InAs. The observed voltage dependence cannot entirely be understood within the presented model.

AB - We have experimentally investigated the electronic transport properties of an AlSb/InAs/AlSb quantum well, where part of the AlSb top layer has been replaced with a superconducting Nb strip. By doing a transmission experiment underneath the Nb strip and comparing the results with a model based on diffusive transport, with some of the injected electrons being Andreev reflected into holes, we can estimate the quasiparticle decay length, xi(qp) similar to 50 nm, in the Nb-InAs superconducting quantum well. This decay length corresponds to an interface transparency of T-SIN = 0.5 between the Nb and InAs. The observed voltage dependence cannot entirely be understood within the presented model.

U2 - 10.1103/PhysRevB.52.R11630

DO - 10.1103/PhysRevB.52.R11630

M3 - Comment/Letter to the editor

SN - 1098-0121

VL - 52

SP - 11630

EP - 11633

JO - Physical Review B

JF - Physical Review B

IS - 16

ER -

Experimental determination of the quasiparticle decay length ξqp in a diffusive superconducting quantum well

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