Field-dependent permittivity in metal-semiconducting SrTiO3 Schottky diodes

R. A. van der Berg, P. W. M. Blom, J. F. M. Cillessen, R. M. Wolf

OnderzoeksoutputAcademicpeer review

41 Citaten (Scopus)
318 Downloads (Pure)

Samenvatting

The field dependence of the dielectric constant of SrTiO3 is investigated using the capacitance versus bias voltage characteristics of various metal‐SrTiO3:Nb Schottky diodes. The relative dielectric constant is shown to decrease one order of magnitude for electric fields ranging from 0.1 to 10 MV/cm. At low fields the permittivity follows the Curie–Weiss law, whereas at fields larger than 500 kV/cm the permittivity is nearly temperature independent. At high doping densities the field dependent permittivity gives rise to a reduction of the depletion width of the Schottky diode.
Originele taal-2English
Pagina's (van-tot)697 - 699
Aantal pagina's3
TijdschriftApplied Physics Letters
Volume66
Nummer van het tijdschrift6
DOI's
StatusPublished - 1995

Citeer dit