Growth mode and interface structure of ag on the HF-treated Si(111): H surface

A. Nishiyama; G. Ter Horst; P. M. Zagwijn; G. N. Van Den Hoven; J. W.M. Frenken; F. Garten; A. R. Schlatmann; J. Vrijmoeth

doi:10.1016/0039-6028(95)01073-4

Growth mode and interface structure of ag on the HF-treated Si(111): H surface

A. Nishiyama^*
, G. Ter Horst
, P. M. Zagwijn
, G. N. Van Den Hoven
, J. W.M. Frenken
, F. Garten
, A. R. Schlatmann
, J. Vrijmoeth

^*Corresponding author voor dit werk

Onderzoeksoutput › Academic › peer review

39 Citaten (Scopus)

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A growth mode and interface structure analysis has been performed for Ag deposited at a high temperature of 300 degrees C on the HF-treated Si(111):H surface by means of medium-energy ion scattering and elastic recoil detection analysis of hydrogen. The measurements show that Ag grows in the Volmer-Weber mode and that the Ag islands on the surface are epitaxial with respect to the substrate. The preferential azimuthal orientation is A-type only when Ag is deposited slowly. The interface does not reconstruct to the root 3x root 3-Ag structure, which is normally observed for Ag deposition above 200 degrees C on the Si(111)7 x 7 surface, but retains its bulk-like structure. The presence of hydrogen at the interface is demonstrated after deposition of thick (1100 Angstrom) Ag films. However, the amount of hydrogen at the interface is not a full monolayer. This partial desorption of hydrogen from the interface explains why the Schottky barrier heights of Ag/Si(111):H diodes are close to those of Ag/Si(111)7 x 7 and Ag/Si(111)2 x 1.

Originele taal-2	English
Pagina's (van-tot)	229-238
Aantal pagina's	10
Tijdschrift	Surface Science
Volume	350
Nummer van het tijdschrift	1-3
DOI's	https://doi.org/10.1016/0039-6028(95)01073-4
Status	Published - 20-apr.-1996

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@article{70c5313c41db41c8bc95c1144f3bedc7,

title = "Growth mode and interface structure of ag on the HF-treated Si(111): H surface",

abstract = "A growth mode and interface structure analysis has been performed for Ag deposited at a high temperature of 300 degrees C on the HF-treated Si(111):H surface by means of medium-energy ion scattering and elastic recoil detection analysis of hydrogen. The measurements show that Ag grows in the Volmer-Weber mode and that the Ag islands on the surface are epitaxial with respect to the substrate. The preferential azimuthal orientation is A-type only when Ag is deposited slowly. The interface does not reconstruct to the root 3x root 3-Ag structure, which is normally observed for Ag deposition above 200 degrees C on the Si(111)7 x 7 surface, but retains its bulk-like structure. The presence of hydrogen at the interface is demonstrated after deposition of thick (1100 Angstrom) Ag films. However, the amount of hydrogen at the interface is not a full monolayer. This partial desorption of hydrogen from the interface explains why the Schottky barrier heights of Ag/Si(111):H diodes are close to those of Ag/Si(111)7 x 7 and Ag/Si(111)2 x 1.",

keywords = "Epitaxy, Medium energy ion scattering (MEIS), Metal-semiconductor interfaces, Schottky barrier, Silicon, Silver",

author = "A. Nishiyama and \{Ter Horst\}, G. and Zagwijn, \{P. M.\} and \{Van Den Hoven\}, \{G. N.\} and Frenken, \{J. W.M.\} and F. Garten and Schlatmann, \{A. R.\} and J. Vrijmoeth",

note = "Funding Information: The authors would like to thank F.W. Saris, J.F. van der Veen, E. Vlieg and T.M, Klapwijk for helpful discussion and comments. We acknowledge S. Lobner and A.M. Vredenberg at the Robert van de Graaff Laboratorium, Rijksuniversiteit Utrecht, for their assistance with the ERDA measurements and for helpful discussion. This work is part of the research program of the Stichting voor Fundamenteel Onderzoek der Materie (FOM) and was made possible by financial support from the Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO).",

year = "1996",

month = apr,

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doi = "10.1016/0039-6028(95)01073-4",

language = "English",

volume = "350",

pages = "229--238",

journal = "Surface Science",

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TY - JOUR

T1 - Growth mode and interface structure of ag on the HF-treated Si(111)

T2 - H surface

AU - Nishiyama, A.

AU - Ter Horst, G.

AU - Zagwijn, P. M.

AU - Van Den Hoven, G. N.

AU - Frenken, J. W.M.

AU - Garten, F.

AU - Schlatmann, A. R.

AU - Vrijmoeth, J.

N1 - Funding Information: The authors would like to thank F.W. Saris, J.F. van der Veen, E. Vlieg and T.M, Klapwijk for helpful discussion and comments. We acknowledge S. Lobner and A.M. Vredenberg at the Robert van de Graaff Laboratorium, Rijksuniversiteit Utrecht, for their assistance with the ERDA measurements and for helpful discussion. This work is part of the research program of the Stichting voor Fundamenteel Onderzoek der Materie (FOM) and was made possible by financial support from the Nederlandse Organisatie voor Wetenschappelijk Onderzoek (NWO).

PY - 1996/4/20

Y1 - 1996/4/20

N2 - A growth mode and interface structure analysis has been performed for Ag deposited at a high temperature of 300 degrees C on the HF-treated Si(111):H surface by means of medium-energy ion scattering and elastic recoil detection analysis of hydrogen. The measurements show that Ag grows in the Volmer-Weber mode and that the Ag islands on the surface are epitaxial with respect to the substrate. The preferential azimuthal orientation is A-type only when Ag is deposited slowly. The interface does not reconstruct to the root 3x root 3-Ag structure, which is normally observed for Ag deposition above 200 degrees C on the Si(111)7 x 7 surface, but retains its bulk-like structure. The presence of hydrogen at the interface is demonstrated after deposition of thick (1100 Angstrom) Ag films. However, the amount of hydrogen at the interface is not a full monolayer. This partial desorption of hydrogen from the interface explains why the Schottky barrier heights of Ag/Si(111):H diodes are close to those of Ag/Si(111)7 x 7 and Ag/Si(111)2 x 1.

AB - A growth mode and interface structure analysis has been performed for Ag deposited at a high temperature of 300 degrees C on the HF-treated Si(111):H surface by means of medium-energy ion scattering and elastic recoil detection analysis of hydrogen. The measurements show that Ag grows in the Volmer-Weber mode and that the Ag islands on the surface are epitaxial with respect to the substrate. The preferential azimuthal orientation is A-type only when Ag is deposited slowly. The interface does not reconstruct to the root 3x root 3-Ag structure, which is normally observed for Ag deposition above 200 degrees C on the Si(111)7 x 7 surface, but retains its bulk-like structure. The presence of hydrogen at the interface is demonstrated after deposition of thick (1100 Angstrom) Ag films. However, the amount of hydrogen at the interface is not a full monolayer. This partial desorption of hydrogen from the interface explains why the Schottky barrier heights of Ag/Si(111):H diodes are close to those of Ag/Si(111)7 x 7 and Ag/Si(111)2 x 1.

KW - Epitaxy

KW - Medium energy ion scattering (MEIS)

KW - Metal-semiconductor interfaces

KW - Schottky barrier

KW - Silicon

KW - Silver

UR - https://www.scopus.com/pages/publications/0030130338

U2 - 10.1016/0039-6028(95)01073-4

DO - 10.1016/0039-6028(95)01073-4

M3 - Article

SN - 0039-6028

VL - 350

SP - 229

EP - 238

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Growth mode and interface structure of ag on the HF-treated Si(111): H surface

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