Influence of the target-substrate distance on the S-W stoichiometry and triboperformance of WSxC films deposited by PVD in reactive and non-reactive processes

OnderzoeksoutputAcademic

Samenvatting

Layered transition metal dichalcogenides (TMD) such as WS2 are materials well-known for their solid lubrication properties in vacuum [1]. However, the lubricating property degrades through oxidation in moisture and it is also limited by its low hardness and low load-bearing capacity. The nanocomposite WSxC coating, namely WS2 lamellae embedded in an amorphous diamond-like carbon (DLC) matrix, is reported to have excellent tribological characteristics, with both low coefficient of friction and low wear rate in a wide range of humidities [2]. One important issue possibly impairing magnetron sputtering high-quality TMD layers is that the WSxC coating is usually substoichiometric, with x <2 [3]. The present research aims at depositing WSxC nanocomposite coatings by PVD in both reactive and non-reactive processes. The influence of the target-substrate distance (TSD=70, 145, 220, 290 mm) on the S/W stoichiometry and its related coating composition, morphology, microstructure, mechanical behavior and tribological performance were investigated in detail. The nanocomposite tribocoating was scrutinized by microscopies (HRSEM, HRTEM and AFM), spectrum (GIXRD, Raman and XPS), and mechanical testing (nanoindentation and tribotest). Results show that S/W ratio, ranging from 0.51 to 1.89, increases with longer TSD in both reactive and co-sputtering process. The mechanical properties and tribological behavior also differ greatly accordingly.
Originele taal-2English
StatusPublished - 18-okt.-2017
Evenement14th International Conference on Plasma Based Ion Implantation & Deposition - New World Shanghai Hotel, Shanghai, China
Duur: 17-okt.-201720-okt.-2017
http://pbiid2017.csp.escience.cn/dct/page/1

Conference

Conference14th International Conference on Plasma Based Ion Implantation & Deposition
Verkorte titelPBIID 2017
Land/RegioChina
StadShanghai
Periode17/10/201720/10/2017
Internet adres

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