Localized States Influence Spin Transport in Epitaxial Graphene

T. Maassen*, J. J. van den Berg, E. H. Huisman, H. Dijkstra, F. Fromm, T. Seyller, B. J. van Wees

*Bijbehorende auteur voor dit werk

Onderzoeksoutput: ArticleAcademicpeer review

33 Citaten (Scopus)
362 Downloads (Pure)


We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements on monolayer epitaxial graphene on SiC(0001) and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface. DOI: 10.1103/PhysRevLett.110.067209

Originele taal-2English
Pagina's (van-tot)067209-1-067209-5
Aantal pagina's5
TijdschriftPhysical Review Letters
Nummer van het tijdschrift6
StatusPublished - 6-feb.-2013

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