Memory retention of doped SbTe phase change line cells measured isothermally and isochronally

J. L.M. Oosthoek*, B. J. Kooi, K. Attenborough, G. A.M. Hurkx, D. J. Gravesteijn

*Corresponding author voor dit werk

OnderzoeksoutputAcademicpeer review

Samenvatting

Doped SbTe phase change (PRAM) line cells produced by e-beam lithography were cycled for at least 100 million times. The memory retention of the PRAM cell was measured both isothermally and isochronally which showed excellent agreement. An activation energy for growth of 1.7 eV was found (after 100 million cycles) for both measurements. Similar isothermal and isochronal measurements were performed on PRAM cells produced by optical lithography which yielded activation energies of 3.0 eV and 3.3 eV, respectively. Our results show that the same phase-change material can show large differences in retention behavior depending on the way the cells are produced.

Originele taal-2English
TitelMaterials and Physics for Nonvolatile Memories II
UitgeverijMaterials Research Society
Pagina's177-182
Aantal pagina's6
ISBN van geprinte versie9781605112237
DOI's
StatusPublished - 1-aug.-2010

Publicatie series

NaamMaterials Research Society Symposium Proceedings
Volume1250
ISSN van geprinte versie0272-9172

Vingerafdruk

Duik in de onderzoeksthema's van 'Memory retention of doped SbTe phase change line cells measured isothermally and isochronally'. Samen vormen ze een unieke vingerafdruk.

Citeer dit