Minimizing Voltage Loss in Wide-Bandgap Perovskites for Tandem Solar Cells

Manoj Jaysankar*, Benedito A. L. Raul, Joao Bastos, Claire Burgess, Christ Weijtens, Mariadriana Creatore, Tom Aernouts, Yinghuan Kuang, Robert Gehlhaar, Afshin Hadipour, Jef Poortmans

*Bijbehorende auteur voor dit werk

OnderzoeksoutputAcademicpeer review

71 Citaten (Scopus)
30 Downloads (Pure)

Samenvatting

Perovskites with bandgaps between 1.7 and 1.8 eV are optimal for tandem configurations with crystalline silicon (c-Si) because they facilitate efficient harvest of solar energy. In that respect, achieving a high open-circuit voltage (V-OC) in such wide-bandgap perovskite solar cells is crucial for a high overall power conversion efficiency (PCE). Here, we provide key insights into the factors affecting the V-OC in wide-bandgap perovskite solar cells. We show that the influence of the hole transport layer (HTL) on V-OC is not simply through its ionization potential but mainly through the quality of the perovskite-HTL interface. With effective interface passivation, we demonstrate perovskite solar cells with a bandgap of 1.72 eV that exhibit a V-OC of 1.22 V. Furthermore, by combining the high-V-OC perovskite solar cell with a c-Si solar cell, we demonstrate a perovskite-Si four-terminal tandem solar cell with a PCE of 27.1%, exceeding the record PCE of single-junction Si solar cells.

Originele taal-2English
Pagina's (van-tot)259-264
Aantal pagina's11
TijdschriftACS Energy Letters
Volume4
Nummer van het tijdschrift1
DOI's
StatusPublished - jan-2019

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