Multi-Level, Low-Voltage Programming of Ferroelectric HfO2/ZrO2 Nanolaminates Integrated in the Back-End-Of-Line

Ruben Hamming-Green; Mamidala Saketh Ram; Donato Francesco Falcone; Beatriz Noheda; Bert Jan Offrein; Laura Begon-Lours

doi:10.1109/EDTM58488.2024.10511719

Multi-Level, Low-Voltage Programming of Ferroelectric HfO₂/ZrO₂ Nanolaminates Integrated in the Back-End-Of-Line

Ruben Hamming-Green^*, Mamidala Saketh Ram, Donato Francesco Falcone, Beatriz Noheda, Bert Jan Offrein, Laura Begon-Lours

^*Corresponding author voor dit werk

Onderzoeksoutput › Academic › peer review

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Functionalizing the Back-End-Of-Line of integrated circuits with non-volatile memories enables the deployment of in-memory computing architectures. By partitioning HfZrO₄ into HfO₂-ZrO₂ nanolaminates, the remanent polarization and the capacitance are improved by 14 and 29%, respectively. Ferroelectric capacitors are integrated into the Back-End-Of-Line of a silicon circuit with NMOS transistors. Bipolar, multilevel polarization programming is possible below 3V, allowing device operation through NMOS transistors. The influence of the substrate on the nanolaminate's material properties is discussed.

Originele taal-2	English
Titel	IEEE Electron Devices Technology and Manufacturing Conference
Subtitel	Strengthening the Globalization in Semiconductors, EDTM 2024
Uitgeverij	IEEE
Aantal pagina's	3
ISBN van elektronische versie	979-8-3503-7152-9
ISBN van geprinte versie	979-8-3503-8308-9
DOI's	https://doi.org/10.1109/EDTM58488.2024.10511719
Status	Published - 7-mei-2024
Evenement	8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 - Bangalore, India Duur: 3-mrt.-2024 → 6-mrt.-2024

Conference

Conference	8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024
Land/Regio	India
Stad	Bangalore
Periode	03/03/2024 → 06/03/2024

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10.1109/EDTM58488.2024.10511719

Multi-Level, Low-Voltage Programming of Ferroelectric HfO2/ZrO2 Nanolaminates Integrated in the Back-End-Of-LineFinal publisher's version, 410 KBLicentie: Taverne

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Hamming-Green, R., Ram, M. S., Falcone, D. F., Noheda, B., Offrein, B. J., & Begon-Lours, L. (2024). Multi-Level, Low-Voltage Programming of Ferroelectric HfO₂/ZrO₂ Nanolaminates Integrated in the Back-End-Of-Line. In IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024 IEEE. https://doi.org/10.1109/EDTM58488.2024.10511719

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title = "Multi-Level, Low-Voltage Programming of Ferroelectric HfO2/ZrO2 Nanolaminates Integrated in the Back-End-Of-Line",

abstract = "Functionalizing the Back-End-Of-Line of integrated circuits with non-volatile memories enables the deployment of in-memory computing architectures. By partitioning HfZrO4 into HfO2-ZrO2 nanolaminates, the remanent polarization and the capacitance are improved by 14 and 29\%, respectively. Ferroelectric capacitors are integrated into the Back-End-Of-Line of a silicon circuit with NMOS transistors. Bipolar, multilevel polarization programming is possible below 3V, allowing device operation through NMOS transistors. The influence of the substrate on the nanolaminate's material properties is discussed.",

keywords = "BEOL, FeCAP, Ferroelectric, Hafnia",

author = "Ruben Hamming-Green and Ram, \{Mamidala Saketh\} and Falcone, \{Donato Francesco\} and Beatriz Noheda and Offrein, \{Bert Jan\} and Laura Begon-Lours",

note = "Publisher Copyright: {\textcopyright} 2024 IEEE.; 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024 ; Conference date: 03-03-2024 Through 06-03-2024",

year = "2024",

month = may,

day = "7",

doi = "10.1109/EDTM58488.2024.10511719",

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Hamming-Green, R, Ram, MS, Falcone, DF, Noheda, B, Offrein, BJ & Begon-Lours, L 2024, Multi-Level, Low-Voltage Programming of Ferroelectric HfO₂/ZrO₂ Nanolaminates Integrated in the Back-End-Of-Line. in IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. IEEE, 8th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2024, Bangalore, India, 03/03/2024. https://doi.org/10.1109/EDTM58488.2024.10511719

Multi-Level, Low-Voltage Programming of Ferroelectric HfO₂/ZrO₂ Nanolaminates Integrated in the Back-End-Of-Line. / Hamming-Green, Ruben; Ram, Mamidala Saketh; Falcone, Donato Francesco et al.
IEEE Electron Devices Technology and Manufacturing Conference: Strengthening the Globalization in Semiconductors, EDTM 2024. IEEE, 2024.

Onderzoeksoutput › Academic › peer review

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AU - Hamming-Green, Ruben

AU - Ram, Mamidala Saketh

AU - Falcone, Donato Francesco

AU - Noheda, Beatriz

AU - Offrein, Bert Jan

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AB - Functionalizing the Back-End-Of-Line of integrated circuits with non-volatile memories enables the deployment of in-memory computing architectures. By partitioning HfZrO4 into HfO2-ZrO2 nanolaminates, the remanent polarization and the capacitance are improved by 14 and 29%, respectively. Ferroelectric capacitors are integrated into the Back-End-Of-Line of a silicon circuit with NMOS transistors. Bipolar, multilevel polarization programming is possible below 3V, allowing device operation through NMOS transistors. The influence of the substrate on the nanolaminate's material properties is discussed.

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