TY - JOUR
T1 - Non-volatile electric control of spin-orbit torques in an oxide two-dimensional electron gas
AU - Grezes, Cécile
AU - Kandazoglou, Aurélie
AU - Cosset-Cheneau, Maxen
AU - Arche, Luis M.Vicente
AU - Noël, Paul
AU - Sgarro, Paolo
AU - Auffret, Stephane
AU - Garello, Kevin
AU - Bibes, Manuel
AU - Vila, Laurent
AU - Attané, Jean Philippe
N1 - Funding Information:
This work received support from the ERC Advanced grant number 833973 “FRESCO”, the Marie Sklodowska–Curie H2020-MSCA-ITN-2020 project SPEAR grant agreement 955671, the French Research Agency (ANR) as part of the projects OISO (ANR-17-CE24-0026-03) and CONTRABASS (ANR-20-CE24-0023) and in the framework of the “Investissements d’avenir” program (ANR−15-IDEX-02). This work was partly supported by the French RENATECH network. The authors would like to thank the Institut Universitaire de France, the Plateforme Technologique Amont (PTA) for technical support, as well as members of Spintec and UMR Thales for fruitful discussions.
Funding Information:
This work received support from the ERC Advanced grant number 833973 “FRESCO”, the Marie Sklodowska–Curie H2020-MSCA-ITN-2020 project SPEAR grant agreement 955671, the French Research Agency (ANR) as part of the projects OISO (ANR-17-CE24-0026-03) and CONTRABASS (ANR-20-CE24-0023) and in the framework of the “Investissements d’avenir” program (ANR−15-IDEX-02). This work was partly supported by the French RENATECH network. The authors would like to thank the Institut Universitaire de France, the Plateforme Technologique Amont (PTA) for technical support, as well as members of Spintec and UMR Thales for fruitful discussions.
Publisher Copyright:
© 2023, The Author(s).
PY - 2023/5/5
Y1 - 2023/5/5
N2 - Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits.
AB - Spin-orbit torques (SOTs) have opened a novel way to manipulate the magnetization using in-plane current, with a great potential for the development of fast and low power information technologies. It has been recently shown that two-dimensional electron gases (2DEGs) appearing at oxide interfaces provide a highly efficient spin-to-charge current interconversion. The ability to manipulate 2DEGs using gate voltages could offer a degree of freedom lacking in the classical ferromagnetic/spin Hall effect bilayers for spin-orbitronics, in which the sign and amplitude of SOTs at a given current are fixed by the stack structure. Here, we report the non-volatile electric-field control of SOTs in an oxide-based Rashba-Edelstein 2DEG. We demonstrate that the 2DEG is controlled using a back-gate electric-field, providing two remanent and switchable states, with a large resistance contrast of 1064%. The SOTs can then be controlled electrically in a non-volatile way, both in amplitude and in sign. This achievement in a 2DEG-CoFeB/MgO heterostructures with large perpendicular magnetization further validates the compatibility of oxide 2DEGs for magnetic tunnel junction integration, paving the way to the advent of electrically reconfigurable SOT MRAMS circuits, SOT oscillators, skyrmion and domain-wall-based devices, and magnonic circuits.
UR - http://www.scopus.com/inward/record.url?scp=85158890727&partnerID=8YFLogxK
U2 - 10.1038/s41467-023-37866-2
DO - 10.1038/s41467-023-37866-2
M3 - Article
C2 - 37147315
AN - SCOPUS:85158890727
SN - 2041-1723
VL - 14
JO - Nature Communications
JF - Nature Communications
IS - 1
M1 - 2590
ER -