Samenvatting
Memristive systems emerge as strong candidates for the implementation of resistive random access memories and neuromorphic computing devices, as they can mimic the electrical analog behavior or biological synapses. In addition, complementary functionalities, such as
memcapacitance, could significantly improve the performance of bio-inspired devices in key issues, such as energy consumption. However, the physics of mem systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that
undergo topotactic transitions and redox reactions show improved performance as mem systems, compared to standard perovskites.
In this paper, we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox
La1/2Sr1/2Mn1/2Co1/2O3−x (LSMCO) films grown on Nb:SrTiO3. We explored devices with different crystallinities (from amorphous to epitaxial LSMCO), out-of-plane orientation [(001) and (110)], and stimulated either with voltage or current pulses. We found that an optimum
memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges
oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes that could
affect the device integrity and performance. Our work contributes to pave the way for the integration of multi-mem topotactic redox oxidebased interfaces in multiple device architectures, in order to exploit their memristive and memcapacitive properties for data storage or
neuromorphic computation.
memcapacitance, could significantly improve the performance of bio-inspired devices in key issues, such as energy consumption. However, the physics of mem systems is not fully understood so far, hampering their large-scale implementation in devices. Perovskites that
undergo topotactic transitions and redox reactions show improved performance as mem systems, compared to standard perovskites.
In this paper, we analyze different strategies to optimize the multi-mem behavior (memristive and memcapacitive) of topotactic redox
La1/2Sr1/2Mn1/2Co1/2O3−x (LSMCO) films grown on Nb:SrTiO3. We explored devices with different crystallinities (from amorphous to epitaxial LSMCO), out-of-plane orientation [(001) and (110)], and stimulated either with voltage or current pulses. We found that an optimum
memory response is found for epitaxial (110) LSMCO stimulated with current pulses. Under these conditions, the system efficiently exchanges
oxygen with the environment minimizing, at the same time, self-heating effects that trigger nanostructural and chemical changes that could
affect the device integrity and performance. Our work contributes to pave the way for the integration of multi-mem topotactic redox oxidebased interfaces in multiple device architectures, in order to exploit their memristive and memcapacitive properties for data storage or
neuromorphic computation.
| Originele taal-2 | English |
|---|---|
| Artikelnummer | 011111 |
| Aantal pagina's | 15 |
| Tijdschrift | APL Materials |
| Volume | 10 |
| Nummer van het tijdschrift | 1 |
| DOI's | |
| Status | Published - 1-jan.-2022 |