Samenvatting
Transport layers are of outmost importance for thin-film solar cells, determining not only their efficiency but also their stability. To bring one of these thin-film technologies toward mass production, many factors besides efficiency and stability become important, including the ease of deposition in a scalable manner and the cost of the different material's layers. Herein, highly efficient organic solar cells (OSCs), in the inverted structure (n-i-p), are demonstrated by using as electron transport layer (ETL) tin oxide (SnO 2 ) deposited by atomic layer deposition (ALD). ALD is an industrial grade technique which can be applied at the wafer level and also in a roll-to-roll configuration. A champion power conversion efficiency (PCE) of 17.26% and a record fill factor (FF) of 79% are shown by PM6:L8-BO OSCs when using ALD-SnO 2 as ETL. These devices outperform solar cells with SnO 2 nanoparticles casted from solution (PCE 16.03%, FF 74%) and also those utilizing the more common sol-gel ZnO (PCE 16.84%, FF 77%). The outstanding results are attributed to a reduced charge carrier recombination at the interface between the ALD-SnO 2 film and the active layer. Furthermore, a higher stability under illumination is demonstrated for the devices with ALD-SnO 2 in comparison with those utilizing ZnO.
Originele taal-2 | English |
---|---|
Pagina's (van-tot) | 2301404 |
Aantal pagina's | 10 |
Tijdschrift | Advanced materials |
Volume | 36 |
Nummer van het tijdschrift | 20 |
Vroegere onlinedatum | 31-mrt.-2023 |
DOI's | |
Status | Published - mei-2024 |