PROMOTION OF THE SI(100)-O2 REACTION BY SM

J ONSGAARD*, J GHIJSEN, RL JOHNSON, M CHRISTIANSEN, F ORSKOV, PJ GODOWSKI

*Bijbehorende auteur voor dit werk

    OnderzoeksoutputAcademicpeer review

    12 Citaten (Scopus)

    Samenvatting

    It is demonstrated that ultrathin and thin films of Sm on Si (001) strongly promote the oxidation of Si. Photoemission measurements of the Si 2p core electrons show binding-energy shifts characteristic of Si2O3 and SiO2. The oxygen binding is conditioned by the presence of Sm, which is also oxidized. Reflection electron-energy-loss spectra and valence-band photoemission data indicate formation of an insulator with a valence-band maximum 4 eV below the Fermi level. The influences of samarium coverages, in the 1-20-monolayer regime, and of the temperature on the reaction are studied.

    Originele taal-2English
    Pagina's (van-tot)4216-4223
    Aantal pagina's8
    TijdschriftPhysical Review. B: Condensed Matter and Materials Physics
    Volume43
    Nummer van het tijdschrift5
    StatusPublished - 15-feb-1991

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