Quantum conductance of point contacts in Si inversion layers

S.L. Wang, P.C. van Son, B.J. van Wees, T.M. Klapwijk

OnderzoeksoutputAcademicpeer review

21 Citaten (Scopus)
228 Downloads (Pure)


We have performed electron-transport studies on high-mobility Si inversion layers in which a narrow and short constriction is defined electrostatically. When the width of the constriction is varied, steplike structures in the conductance are observed with a spacing of approximately 4e2/h in zero magnetic field and at a temperature of 1.2 K. In the presence of a magnetic field these features develop into quantum Hall plateaus and the fourfold degeneracy is lifted. We argue that this behavior arises from the depopulation of successive one-dimensional subbands in the constriction.
Originele taal-2English
Pagina's (van-tot)12873-12876
Aantal pagina's4
TijdschriftPhysical Review B
Nummer van het tijdschrift19
StatusPublished - 15-nov-1992

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