Quantum conductance of point contacts in Si inversion layers

S.L. Wang, P.C. van Son, B.J. van Wees, T.M. Klapwijk

OnderzoeksoutputAcademicpeer review

21 Citaten (Scopus)
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Samenvatting

We have performed electron-transport studies on high-mobility Si inversion layers in which a narrow and short constriction is defined electrostatically. When the width of the constriction is varied, steplike structures in the conductance are observed with a spacing of approximately 4e2/h in zero magnetic field and at a temperature of 1.2 K. In the presence of a magnetic field these features develop into quantum Hall plateaus and the fourfold degeneracy is lifted. We argue that this behavior arises from the depopulation of successive one-dimensional subbands in the constriction.
Originele taal-2English
Pagina's (van-tot)12873-12876
Aantal pagina's4
TijdschriftPhysical Review B
Volume46
Nummer van het tijdschrift19
DOI's
StatusPublished - 15-nov-1992

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