Size effects and scaling in misfit dislocation formation in self-assembled quantum dots

L.H. Friedman, D.M. Weygand, E. van der Giessen

OnderzoeksoutputAcademic

Samenvatting

Growth islands due to large mismatch strain arising in Stranski-Krastanow (SK) and Volmer-Weber (VW) film growth can be used to produce large arrays of quantum dots. This same mismatch strain may also cause misfit dislocations to form, presenting a quality control problem. Johnson and Freund (J. Appl. Phys. 81(9), 1997, p6081) developed a two-dimensional model of misfit dislocation nucleation in SK and VW growth islands whereby they predict a power-law relation between misfit strain, epsilon(m), and the minimum island size to nucleate a misfit dislocation, R(c): R(c) proportional to epsilon(1/(lambda-1))(m) where lambda <1 is a function of the island-substrate contact angle. This problem is treated here in three dimensions as an application of a numerical dislocation simulation using the finite element method to take proper boundary conditions into account. The predictions are analyzed in the context of the Johnson-Freund model, and modification of the power-law is shown to be necessary.

Originele taal-2English
TitelICCN 2002: INTERNATIONAL CONFERENCE ON COMPUTATIONAL NANOSCIENCE AND NANOTECHNOLOGY
RedacteurenM Laudon, B Romanowicz
Plaats van productieCAMBRIDGE
UitgeverijComputational Mechanics Publications (CMP)
Pagina's271-274
Aantal pagina's4
ISBN van geprinte versie0-9708275-6-3
StatusPublished - 2002
Evenement2nd International Conference on Computational Nanoscience and Nanotechnology - , Puerto Rico
Duur: 21-apr-200225-apr-2002

Other

Other2nd International Conference on Computational Nanoscience and Nanotechnology
Land/RegioPuerto Rico
Periode21/04/200225/04/2002

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