Spin and charge transport in graphene devices in the classical and quantum regimes

Marcos Henrique Diniz Guimaraes

Spin and charge transport in graphene devices in the classical and quantum regimes

Vertaalde titel van de bijdrage: Spin en ladings transport in grafeen devices in de klassieke en kwantum regimes

Marcos Henrique Diniz Guimaraes

Fysica van Nano Devices

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Grafeen, één atoom dik koolstofmateriaal, werd in het afgelopen decennium één van de meest veelbelovende materialen voor toekomstige elektronische apparaten. Grafeen heeft ook groot potentieel getoond voor spintronische toepassingen, waarbij het intrinsieke hoekmoment van het elektron (spin) wordt gebruikt om informatie te dragen. In dit proefschrift tonen we de spin transport eigenschappen van grafeen spin valves voor verschillende kanaal geometrieën en elektronische kwaliteit. Voor een klein grafeen kanaal laten we zien dat kwantum interferentie kan voorkomen en dat het spin signaal gemoduleerd kan worden met een aangelegde poortspanning. Verder laten we zien dat hangend grafeen, lijkend op een hangmat, de spin transport eigenschappen kan verbeteren. Deze eigenschappen kunnen verder worden verbeterd door het inkapselen van grafeen met boornitride, waarbij ook de spin gegevens via een dwars elektrisch veld kunnen worden gecontroleerd.

Vertaalde titel van de bijdrage	Spin en ladings transport in grafeen devices in de klassieke en kwantum regimes
Originele taal-2	English
Kwalificatie	Doctor of Philosophy
Toekennende instantie	Rijksuniversiteit Groningen
Begeleider(s)/adviseur	van Wees, Bart, Supervisor
Datum van toekenning	23-jan.-2015
Plaats van publicatie	[S.l.]
Uitgever	[S.n.]
Gedrukte ISBN's	978-90-367-7590-8
Elektronische ISBN's	978-90-367-7589-2
Status	Published - 2015

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Title and contentsFinal publisher's version, 413 KB
Chapter 1Final publisher's version, 217 KB
Chapter 2Final publisher's version, 2,28 MB
Chapter 3Final publisher's version, 2,55 MB
Chapter 4Final publisher's version, 15,2 MB
Chapter 5Final publisher's version, 5,49 MB
Chapter 7Final publisher's version, 1,95 MB
Chapter 8Final publisher's version, 3,05 MB
Chapter 9Final publisher's version, 6,17 MB
Chapter 10Final publisher's version, 204 KB
Complete dissertationFinal publisher's version, 43,6 MB
PropositionsFinal publisher's version, 22,6 KB
Chapter 6Final publisher's version, 7,73 MB

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@phdthesis{afd07250d4204f8fb4a879dee1715404,

title = "Spin and charge transport in graphene devices in the classical and quantum regimes",

abstract = "Graphene, a one atom thick carbon material, emerged in the past decade to be one of the most promising materials for future electronic devices. Graphene has also shown great potential for spintronic applications, where the intrisinc angular momentum of the electron (spin) is used to carry information. In this thesis we studied the spin transport properties in graphene based spin valves for different channel geometries and electronic quality. We show here that, when the graphene channel is small, quantum interference effects can take place and can cause a modulation on the spin signal due to an applied gate voltage. Furthermore, we show that suspending the graphene flake, like a hammock, can improve the spin transport properties. These properties can be further improved by encapsulating the graphene flake with Boron Nitride, which also allows us to control the spin information using a transverse electric field.",

author = "{Diniz Guimaraes}, {Marcos Henrique}",

year = "2015",

language = "English",

isbn = "978-90-367-7590-8",

publisher = "[S.n.]",

school = "University of Groningen",

}

TY - BOOK

T1 - Spin and charge transport in graphene devices in the classical and quantum regimes

AU - Diniz Guimaraes, Marcos Henrique

PY - 2015

Y1 - 2015

N2 - Graphene, a one atom thick carbon material, emerged in the past decade to be one of the most promising materials for future electronic devices. Graphene has also shown great potential for spintronic applications, where the intrisinc angular momentum of the electron (spin) is used to carry information. In this thesis we studied the spin transport properties in graphene based spin valves for different channel geometries and electronic quality. We show here that, when the graphene channel is small, quantum interference effects can take place and can cause a modulation on the spin signal due to an applied gate voltage. Furthermore, we show that suspending the graphene flake, like a hammock, can improve the spin transport properties. These properties can be further improved by encapsulating the graphene flake with Boron Nitride, which also allows us to control the spin information using a transverse electric field.

AB - Graphene, a one atom thick carbon material, emerged in the past decade to be one of the most promising materials for future electronic devices. Graphene has also shown great potential for spintronic applications, where the intrisinc angular momentum of the electron (spin) is used to carry information. In this thesis we studied the spin transport properties in graphene based spin valves for different channel geometries and electronic quality. We show here that, when the graphene channel is small, quantum interference effects can take place and can cause a modulation on the spin signal due to an applied gate voltage. Furthermore, we show that suspending the graphene flake, like a hammock, can improve the spin transport properties. These properties can be further improved by encapsulating the graphene flake with Boron Nitride, which also allows us to control the spin information using a transverse electric field.

M3 - Thesis fully internal (DIV)

SN - 978-90-367-7590-8

PB - [S.n.]

CY - [S.l.]

ER -

Spin and charge transport in graphene devices in the classical and quantum regimes

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