Spin Hall magnetoresistance across a paramagnetic Pt/NdGaO3 interface

V. Eswara Phanindra; A. Das; J. J.L. van Rijn; S. Chen; B. J. van Wees; T. Banerjee

doi:10.1063/5.0152080

Spin Hall magnetoresistance across a paramagnetic Pt/NdGaO₃ interface

V. Eswara Phanindra, A. Das, J. J.L. van Rijn^*, S. Chen, B. J. van Wees, T. Banerjee^*

^*Corresponding author voor dit werk

Fysica van Nano Devices

Onderzoeksoutput › Academic › peer review

3 Citaten (Scopus)

103 Downloads (Pure)

Samenvatting

In recent years, spin Hall magnetoresistance (SMR) has emerged as an efficient way to probe the spontaneous magnetization state in ordered magnetic systems by electrical current. Less known is its versatility as a probe of materials that do not possess spontaneous magnetization, such as in paramagnets. In this work, SMR is used to probe paramagnetic NdGaO₃ (NGO), a rare earth oxide, possessing a sizable spin-orbit interaction (L = 6). NGO has not been investigated earlier for its efficiency in propagating spins. We have performed extensive temperature and angle dependent-magnetoresistance (ADMR) studies along different crystallographic axes in NGO, using platinum (Pt) as a spin injector and a detector and utilizing (inverse) spin Hall effect. We find a close correlation between the temperature dependence of the ADMR response with magnetization in NGO and a linear current bias dependence of the ADMR amplitudes. These are characteristics of the SMR effect in Pt/NGO, arising from the torque acting on localized moments in NGO and considering crystal field induced intermultiplet transitions with temperature. Control experiments on Pt/SrTiO₃ and Pt/SiO₂ devices were also carried out in order to validate the observed SMR response in the Pt/NGO bilayer and to rule out magnetoresistive contributions from Pt.

Originele taal-2	English
Artikelnummer	022410
Aantal pagina's	8
Tijdschrift	Applied Physics Letters
Volume	123
Nummer van het tijdschrift	2
DOI's	https://doi.org/10.1063/5.0152080
Status	Published - 10-jul.-2023

Toegang tot document

10.1063/5.0152080

Spin Hall magnetoresistance across a paramagnetic Pt/NdGaO3 interface Final publisher's version, 2,28 MBLicentie: Taverne

Handle.net

Permanente koppeling

Andere bestanden en links

Link naar publicatie in Scopus

Citeer dit

@article{307c8f2c589a4213a99f109422037d48,

title = "Spin Hall magnetoresistance across a paramagnetic Pt/NdGaO3 interface",

abstract = "In recent years, spin Hall magnetoresistance (SMR) has emerged as an efficient way to probe the spontaneous magnetization state in ordered magnetic systems by electrical current. Less known is its versatility as a probe of materials that do not possess spontaneous magnetization, such as in paramagnets. In this work, SMR is used to probe paramagnetic NdGaO3 (NGO), a rare earth oxide, possessing a sizable spin-orbit interaction (L = 6). NGO has not been investigated earlier for its efficiency in propagating spins. We have performed extensive temperature and angle dependent-magnetoresistance (ADMR) studies along different crystallographic axes in NGO, using platinum (Pt) as a spin injector and a detector and utilizing (inverse) spin Hall effect. We find a close correlation between the temperature dependence of the ADMR response with magnetization in NGO and a linear current bias dependence of the ADMR amplitudes. These are characteristics of the SMR effect in Pt/NGO, arising from the torque acting on localized moments in NGO and considering crystal field induced intermultiplet transitions with temperature. Control experiments on Pt/SrTiO3 and Pt/SiO2 devices were also carried out in order to validate the observed SMR response in the Pt/NGO bilayer and to rule out magnetoresistive contributions from Pt.",

author = "{Eswara Phanindra}, V. and A. Das and {van Rijn}, {J. J.L.} and S. Chen and {van Wees}, {B. J.} and T. Banerjee",

note = "Funding Information: The authors thank A. S. Goossens, Jacob Baas, J. G. Holstein, H. H. de Vries, and T. J. Schouten for technical support. This work was realized using the facilities available at NanoLab NL and was supported by the Dieptestrategie grant from the Zernike Institute for Advanced Materials, University of Groningen. V.E.P. acknowledges the financial support from the Spinoza Prize awarded to B. J. van Wees by NWO. Publisher Copyright: {\textcopyright} 2023 Author(s).",

year = "2023",

month = jul,

day = "10",

doi = "10.1063/5.0152080",

language = "English",

volume = "123",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "AMER INST PHYSICS",

number = "2",

}

TY - JOUR

T1 - Spin Hall magnetoresistance across a paramagnetic Pt/NdGaO3 interface

AU - Eswara Phanindra, V.

AU - Das, A.

AU - van Rijn, J. J.L.

AU - Chen, S.

AU - van Wees, B. J.

AU - Banerjee, T.

N1 - Funding Information: The authors thank A. S. Goossens, Jacob Baas, J. G. Holstein, H. H. de Vries, and T. J. Schouten for technical support. This work was realized using the facilities available at NanoLab NL and was supported by the Dieptestrategie grant from the Zernike Institute for Advanced Materials, University of Groningen. V.E.P. acknowledges the financial support from the Spinoza Prize awarded to B. J. van Wees by NWO. Publisher Copyright: © 2023 Author(s).

PY - 2023/7/10

Y1 - 2023/7/10

N2 - In recent years, spin Hall magnetoresistance (SMR) has emerged as an efficient way to probe the spontaneous magnetization state in ordered magnetic systems by electrical current. Less known is its versatility as a probe of materials that do not possess spontaneous magnetization, such as in paramagnets. In this work, SMR is used to probe paramagnetic NdGaO3 (NGO), a rare earth oxide, possessing a sizable spin-orbit interaction (L = 6). NGO has not been investigated earlier for its efficiency in propagating spins. We have performed extensive temperature and angle dependent-magnetoresistance (ADMR) studies along different crystallographic axes in NGO, using platinum (Pt) as a spin injector and a detector and utilizing (inverse) spin Hall effect. We find a close correlation between the temperature dependence of the ADMR response with magnetization in NGO and a linear current bias dependence of the ADMR amplitudes. These are characteristics of the SMR effect in Pt/NGO, arising from the torque acting on localized moments in NGO and considering crystal field induced intermultiplet transitions with temperature. Control experiments on Pt/SrTiO3 and Pt/SiO2 devices were also carried out in order to validate the observed SMR response in the Pt/NGO bilayer and to rule out magnetoresistive contributions from Pt.

AB - In recent years, spin Hall magnetoresistance (SMR) has emerged as an efficient way to probe the spontaneous magnetization state in ordered magnetic systems by electrical current. Less known is its versatility as a probe of materials that do not possess spontaneous magnetization, such as in paramagnets. In this work, SMR is used to probe paramagnetic NdGaO3 (NGO), a rare earth oxide, possessing a sizable spin-orbit interaction (L = 6). NGO has not been investigated earlier for its efficiency in propagating spins. We have performed extensive temperature and angle dependent-magnetoresistance (ADMR) studies along different crystallographic axes in NGO, using platinum (Pt) as a spin injector and a detector and utilizing (inverse) spin Hall effect. We find a close correlation between the temperature dependence of the ADMR response with magnetization in NGO and a linear current bias dependence of the ADMR amplitudes. These are characteristics of the SMR effect in Pt/NGO, arising from the torque acting on localized moments in NGO and considering crystal field induced intermultiplet transitions with temperature. Control experiments on Pt/SrTiO3 and Pt/SiO2 devices were also carried out in order to validate the observed SMR response in the Pt/NGO bilayer and to rule out magnetoresistive contributions from Pt.

UR - http://www.scopus.com/inward/record.url?scp=85165227407&partnerID=8YFLogxK

U2 - 10.1063/5.0152080

DO - 10.1063/5.0152080

M3 - Article

AN - SCOPUS:85165227407

SN - 0003-6951

VL - 123

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 2

M1 - 022410

ER -