Spin transport in fully hexagonal boron nitride encapsulated graphene

M. Gurram*, S. Omar, S. Zihlmann, P. Makk, C. Schoenenberger, B. J. van Wees

*Corresponding author voor dit werk

OnderzoeksoutputAcademicpeer review

45 Citaten (Scopus)
69 Downloads (Pure)

Samenvatting

We study fully hexagonal boron nitride (hBN) encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes: thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO2/Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in-between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5-mu m-long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pinhole-free nature of the thin hBN as an efficient tunnel barrier.

Originele taal-2English
Artikelnummer115441
Aantal pagina's6
TijdschriftPhysical Review. B: Condensed Matter and Materials Physics
Volume93
Nummer van het tijdschrift11
DOI's
StatusPublished - 29-mrt.-2016

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