Spin Transport in High-Quality Suspended Graphene Devices

Marcos H. D. Guimaraes; A. Veligura; P. J. Zomer; T. Maassen; I. J. Vera-Marun; N. Tombros; B. J. van Arees; B.J. van Wees

doi:10.1021/nl301050a

Spin Transport in High-Quality Suspended Graphene Devices

Marcos H. D. Guimaraes^*
, A. Veligura
, P. J. Zomer
, T. Maassen
, I. J. Vera-Marun
, N. Tombros
, B. J. van Arees
, B.J. van Wees

^*Corresponding author voor dit werk

Onderzoeksoutput › Academic › peer review

120 Citaten (Scopus)

889 Downloads (Pure)

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We measure spin transport in high mobility suspended graphene (mu approximate to 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (tau(s) approximate to 150 ps) and spin relaxation length (lambda(s) = 4.7 mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

Originele taal-2	English
Pagina's (van-tot)	3512-3517
Aantal pagina's	6
Tijdschrift	Nano Letters
Volume	12
Nummer van het tijdschrift	7
DOI's	https://doi.org/10.1021/nl301050a
Status	Published - jul-2012

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@article{465ad937ecfd4be8b2cf497ac714e67b,

title = "Spin Transport in High-Quality Suspended Graphene Devices",

abstract = "We measure spin transport in high mobility suspended graphene (mu approximate to 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (tau(s) approximate to 150 ps) and spin relaxation length (lambda(s) = 4.7 mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.",

keywords = "Suspended graphene, spin transport, Hanle precession, RELAXATION-TIMES, SEMICONDUCTOR",

author = "Guimaraes, \{Marcos H. D.\} and A. Veligura and Zomer, \{P. J.\} and T. Maassen and Vera-Marun, \{I. J.\} and N. Tombros and \{van Arees\}, \{B. J.\} and Wees, \{B.J. van\}",

year = "2012",

month = jul,

doi = "10.1021/nl301050a",

language = "English",

volume = "12",

pages = "3512--3517",

journal = "Nano Letters",

issn = "1530-6984",

publisher = "AMER CHEMICAL SOC",

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TY - JOUR

T1 - Spin Transport in High-Quality Suspended Graphene Devices

AU - Guimaraes, Marcos H. D.

AU - Veligura, A.

AU - Zomer, P. J.

AU - Maassen, T.

AU - Vera-Marun, I. J.

AU - Tombros, N.

AU - van Arees, B. J.

AU - Wees, B.J. van

PY - 2012/7

Y1 - 2012/7

N2 - We measure spin transport in high mobility suspended graphene (mu approximate to 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (tau(s) approximate to 150 ps) and spin relaxation length (lambda(s) = 4.7 mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

AB - We measure spin transport in high mobility suspended graphene (mu approximate to 10(5)cm(2)/(V s)), obtaining a (spin) diffusion coefficient of 0.1 m(2)/s and giving a lower bound on the spin relaxation time (tau(s) approximate to 150 ps) and spin relaxation length (lambda(s) = 4.7 mu m) for intrinsic graphene. We develop a theoretical model considering the different graphene regions of our devices that explains our experimental data.

KW - Suspended graphene

KW - spin transport

KW - Hanle precession

KW - RELAXATION-TIMES

KW - SEMICONDUCTOR

U2 - 10.1021/nl301050a

DO - 10.1021/nl301050a

M3 - Article

SN - 1530-6984

VL - 12

SP - 3512

EP - 3517

JO - Nano Letters

JF - Nano Letters

IS - 7

ER -

Spin Transport in High-Quality Suspended Graphene Devices

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