Sputtering of silicon by multiply charged ions

S. T. de Zwart*, T. Fried, D. O. Boerma, R. Hoekstra, A. G. Drentje, A. L. Boers

*Bijbehorende auteur voor dit werk

OnderzoeksoutputAcademicpeer review

71 Citaten (Scopus)

Samenvatting

We report on the sputtering of Si by 20 keV multiply charged Ar ions with primary charge state q ⩽ 9. To investigate the role of “electronic” sputtering, both the yield of positively charged secondary ions and the total sputtering yield (i.e. ions + neutrals) have been measured versus q. The secondary ion yield increases with increasing q, but the total sputtering yield remains however unaffected. From the comparably small effect observed we conclude that “electronic” sputtering does not contribute significantly to the ejection process.
Originele taal-2English
Pagina's (van-tot)L939-L946
Aantal pagina's8
TijdschriftSurface Science
Volume177
Nummer van het tijdschrift2
DOI's
StatusPublished - dec-1986

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