Superconducting Dome in a Gate-Tuned Band Insulator

J. T. Ye*, Y. J. Zhang, R. Akashi, M. S. Bahramy, R. Arita, Y. Iwasa*

*Bijbehorende auteur voor dit werk

OnderzoeksoutputAcademicpeer review

801 Citaten (Scopus)

Samenvatting

A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature-carrier density phase diagram of MoS2, an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large enhancement in the transition temperature T-c occurring at optimal doping in the chemically inaccessible low-carrier density regime. This observation indicates that the superconducting dome may arise even in doped band insulators.

Originele taal-2English
Pagina's (van-tot)1193-1196
Aantal pagina's4
TijdschriftScience
Volume338
Nummer van het tijdschrift6111
DOI's
StatusPublished - 30-nov-2012
Extern gepubliceerdJa

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