Suppressed spin dephasing for two-dimensional and bulk electrons in GaAs wires due to engineered cancellation of spin-orbit interaction terms

S.Z. Denega, Thorsten Last, J. Liu, A. Slachter, P.J. Rizo, P.H.M. van Loosdrecht, B.J. van Wees, D. Reuter, A.D. Wieck, C.H. van der Wal

OnderzoeksoutputAcademicpeer review

15 Citaten (Scopus)
337 Downloads (Pure)

Samenvatting

We report a study of suppressed spin dephasing for quasi-one-dimensional electron ensembles in wires etched into a GaAs/AlGaAs heterojunction system. Time-resolved Kerr-rotation measurements show a suppression that is most pronounced for wires along the [110] crystal direction. This is the fingerprint of a suppression that is enhanced due to a strong anisotropy in spin-orbit fields that can occur when the Rashba and Dresselhaus contributions are engineered to cancel each other. A surprising observation is that this mechanism for suppressing spin dephasing is not only effective for electrons in the heterojunction quantum well but also for electrons in a deeper bulk layer.

Originele taal-2English
Artikelnummer153302
Pagina's (van-tot)11-15
Aantal pagina's4
TijdschriftPhysical Review. B: Condensed Matter and Materials Physics
Volume81
Nummer van het tijdschrift15
DOI's
StatusPublished - 12-apr.-2010

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