Trends in tests and failure mechanisms in deep sub-micron technologies

Said Hamdioui; Zaid Al-Ars; Lotfi Mhamdi; Georgi Gaydadjiev; Stamatis Vassiliadis

doi:10.1109/DTIS.2006.1708677

Trends in tests and failure mechanisms in deep sub-micron technologies

Said Hamdioui^*, Zaid Al-Ars, Lotfi Mhamdi, Georgi Gaydadjiev, Stamatis Vassiliadis

^*Bijbehorende auteur voor dit werk

Onderzoeksoutput › Academic › peer review

5 Citaten (Scopus)

Samenvatting

The increasing integration density of semicon-ductor devices and the usage of new materials and inno-vative manufacturing techniques result in introducing new and gradually changing the types of failure mechanisms and defects that take place in manufactured silicon. This is particularly true for current deep sub-micron manufactur-ing technologies. As we approach the nanoscale domain, new types of fault models and test methods are needed to cope with the increasing complexity of the observed faulty behavior. This paper discusses the latest trends in testing and failure mechanisms in all stages of IC production.

Originele taal-2	English
Titel	International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.
Uitgeverij	IEEE
Pagina's	216-221
Aantal pagina's	6
ISBN van geprinte versie	9780-7803-9726-6
DOI's	https://doi.org/10.1109/DTIS.2006.1708677
Status	Published - 1-dec.-2006
Extern gepubliceerd	Ja
Evenement	2006 International Conference on Design and Test of Integrated Systems in Nanoscale Technology, IEEE DTIS 2006 - Tunis, Tunisia Duur: 5-sep.-2006 → 7-sep.-2006

Conference

Conference	2006 International Conference on Design and Test of Integrated Systems in Nanoscale Technology, IEEE DTIS 2006
Land/Regio	Tunisia
Stad	Tunis
Periode	05/09/2006 → 07/09/2006

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title = "Trends in tests and failure mechanisms in deep sub-micron technologies",

abstract = "The increasing integration density of semicon-ductor devices and the usage of new materials and inno-vative manufacturing techniques result in introducing new and gradually changing the types of failure mechanisms and defects that take place in manufactured silicon. This is particularly true for current deep sub-micron manufactur-ing technologies. As we approach the nanoscale domain, new types of fault models and test methods are needed to cope with the increasing complexity of the observed faulty behavior. This paper discusses the latest trends in testing and failure mechanisms in all stages of IC production.",

author = "Said Hamdioui and Zaid Al-Ars and Lotfi Mhamdi and Georgi Gaydadjiev and Stamatis Vassiliadis",

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booktitle = "International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.",

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Hamdioui, S, Al-Ars, Z, Mhamdi, L, Gaydadjiev, G & Vassiliadis, S 2006, Trends in tests and failure mechanisms in deep sub-micron technologies. in International Conference on Design and Test of Integrated Systems in Nanoscale Technology, 2006. DTIS 2006.., 1708677, IEEE, blz. 216-221, 2006 International Conference on Design and Test of Integrated Systems in Nanoscale Technology, IEEE DTIS 2006, Tunis, Tunisia, 05/09/2006. https://doi.org/10.1109/DTIS.2006.1708677

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AU - Vassiliadis, Stamatis

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