Unified description of bulk and interface-enhanced spin pumping

SM Watts*, J Grollier, CH van der Wal, BJ van Wees

*Bijbehorende auteur voor dit werk

OnderzoeksoutputAcademicpeer review

13 Citaten (Scopus)
313 Downloads (Pure)

Samenvatting

We describe a mechanism for generating nonequilibrium electron-spin accumulation in semiconductors or metals by rf magnetic field pumping. With a semiclassical model we show that a rotating applied magnetic field (or the precessing magnetization inside a weak ferromagnet) generates a dc spin accumulation. For bulk systems this spin accumulation is in general given by a small fraction of h omega, where omega is the rotation or precession frequency. With the addition of a neighboring, field-free region, and allowing for the diffusion of spins across the interface, the spin accumulation is dramatically enhanced towards h omega near the interface. The interface-enhanced spin accumulation obtained within our bulk-oriented model is surprisingly similar to predictions based on interface-scattering theory [A. Brataas , Phys. Rev. B 66, 060404(R) (2002)].

Originele taal-2English
Artikelnummer077201
Pagina's (van-tot)art. - 077201
Aantal pagina's4
TijdschriftPhysical Review Letters
Volume96
Nummer van het tijdschrift7
DOI's
StatusPublished - 24-feb.-2006

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